triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 1 13.5 - 15 ghz 2 watt power amplifier TGA1152-EPU key features 0.5 um phemt technology 34 db nominal gain 31.7dbm nominal pout @ p1db >2w psat at 14.5ghz otoi 39dbm typical bias 7v @ 680 ma chip dimensions 1.390mm x 2.495mm primary applications ku band sat-com point-to-point radio note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice preliminary measured performance august 28, 2001 29 29.5 30 30.5 31 31.5 32 32.5 33 33.5 34 34.5 12.5 13 13.5 14 14.5 15 15.5 frequency (ghz) power (dbm) psat p2db p1db -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 10 11 12 13 14 15 16 17 18 19 20 frequency (ghz) s21 (db) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 s11, s22 (db) s21 s11 s22 samples available q201 measured performance summary parameter units typical frequency ghz 13.5-15 small signal gain db 34 noise figure db n/a input return loss db -10 output return loss db -17 p1db @ 14.5 ghz dbm 32 (25c) gain flatness 14-14.5 ghz db +/- 0.25 gain flatness 13.5-14.5 ghz db +/- 1.0 imp3@scl = p1db ? 10db dbc 35 oip3 (p1db-10db) dbc 39 v dd v7 nominal small signal bias current ma 680 bias current at p1db ma 870 size mm 2 3.46
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 2 table i maximum ratings symbol parameter 5/ value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 1.023 a 4/ | i g | gate supply current 35.2 ma p in input continuous wave power 21.4 dbm p d power dissipation 9.404 w 3/ 4/ t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this bias condition with a base plate temperature of 70 0 c, the median life is reduced from 8.9e+6 to 4.2 e+4 hours. 4/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device. TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 3 dc specifications (100%) (t a = 25 c + 5 c) notes symbol test conditions 2/ limits units min max i dss std info only 200 ma gm std info only 252 ms 1/ |v p1 |std 0.5 1.5 v 1/ |v p2 |std 0.5 1.5 v 1/ |v p3 |std 0.5 1.5 v 1/ |v bvgd |std 13 30 v 1/ |v bvgs |std 13 30 v 1/ v p , v bvgd , and v bvgs are negative. 2/ the measurement conditions are subject to change at the manufacture?s discretion preliminary rf specifications (t a = 25 c + 5 c) note test measurement conditions value units 7v @ 682ma +/- 5% min typ max small-signal gain magnitude 13.5 ? 16.5 ghz 34 db power output at pin = +3 dbm 14.5 ghz 31 dbm pae at pin = +3 dbm 14.5 ghz 23 % input return loss magnitude 13.5 ? 16.5 ghz -10 db output return loss magnitude 13.5 ? 16.5 ghz -10 db note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 4 thermal information* parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of carrier) vd = 7v i d = 682 ma pdiss = 4.774 w 125.74 11.67 8.9e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. * the thermal information is a result of a detailed thermal model. TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 5 29.5 30 30.5 31 31.5 32 32.5 33 33.5 13 13.5 14 14.5 15 15.5 frequency (ghz) pout@pin=1dbm -40c 25c 70c tga1152 over temperature measured performance 6v @ 680ma f=14ghz, vd=7v/680ma, tone separation=10mhz -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 10 12 14 16 18 20 22 24 26 28 30 fundamental output power/tone (dbm) mean imd3 level (dbm) tga1152 imd3 performance TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 6 output tfn vd = +7v 100pf 0.01 f notes: 1. 0.1 f capacitors on gate, drain lines not shown but used input tfn cu-moly carrier plate (20mil thick) 100pf vg 0.01 f 50 ? ? ? ? gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 7 TGA1152-EPU
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice reflow process assembly notes: ? = ausn (80/20) solder with limited exposure to temperatures at or above 300 c ? = alloy station or conveyor furnace with reducing atmosphere ? = no fluxes should be utilized ? = coefficient of thermal expansion matching is critical for long-term reliability ? = storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? = vacuum pencils and/or vacuum collets preferred method of pick up ? = avoidance of air bridges during placement ? = force impact critical during auto placement ? = organic attachment can be used in low-power applications ? = curing should be done in a convection oven; proper exhaust is a safety concern ? = microwave or radiant curing should not be used because of differential heating ? = coefficient of thermal expansion matching is critical interconnect process assembly notes: ? = thermosonic ball bonding is the preferred interconnect technique ? = force, time, and ultrasonics are critical parameters ? = aluminum wire should not be used ? = discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? = maximum stage temperature: 200 c gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA1152-EPU
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